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APT150GN60LDQ4G

IGBT, 600V Field Stop, 220A, 536W, SOT-264

buc
ID Code:187658
Producator:Microchip Technology
Pret cu TVA : 41,0226 €
Pret fara TVA : 33,9030 €
VAT:21 %
Disponibilitatea:la cerere
Stocul total:0 buc
Marking manufacturer: APT150GN60LDQ4G
Central warehouse Zdice: 0 buc
Unit:: buc
!_prehled mnozstevnich slev_!
CantitateaPret fara TVAPret cu TVA
1 + 33,9030 €41,0226 €
5 + 32,4912 €39,3143 €
10 + 31,0785 €37,6050 €
25 + 29,6659 €35,8958 €


Basic information:

Marking manufacturerAPT150GN60LDQ4G 
Type of component:IGBT-Fieldstop 
KategorieIGBT Full Silicon 
Configuration:single 1*(T+D) 
Construction:1*(IGBT+D) 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSDa 
REACHNu 
Type of casing:THT 
Case:TO-264 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:buc 
Weight:12 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 600 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)220 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)220 [A]
IF(AV) (Tc/Ta=100÷119°C)123 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UCE (sat) (@25°C)1.45 [V]
Pmax with heatsink (TC=25°C)536 [W]
tr (Turn-on / rise time)110 [ns]
tf/tq (Turn-off / fall time)60 [ns]
Qg (Total Gate Charge)970 [nC]
Cin (Input Capacitance)9200 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.28 [°C/W]
Rthjc2 Dioda, Tyristor0.3 [°C/W]
RM - Pitch pins5.45 [mm]
Number of Pins
D - Outer diameter 3.25 [mm]
W - Width 20 [mm]
L - Length 26 [mm]
H - Height [mm]
Rozměry/Velikost (LxWxH)TO-264 [mm]
Dimensions of outlets1,3 [mm]
Lv - Length of outlets20 [mm]

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