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APT80GP60J

PT IGBT, 600V, 151A, 462W, SOT-227 (ISOTOP)

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APT80GP60J Microchip Technology
APT80GP60J Microchip Technology
APT80GP60J Microchip Technology
buc
ID Code:187764
Producator:Microchip Technology
Pret cu TVA : 63,4740 €
Pret fara TVA : 52,4579 €
VAT:21 %
Disponibilitatea:la cerere
Stocul total:0 buc
Marking manufacturer: APT80GP60J
Central warehouse Zdice: 0 buc
Unit:: buc
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CantitateaPret fara TVAPret cu TVA
1 + 52,4579 €63,4740 €
5 + 50,2724 €60,8296 €
10 + 48,0865 €58,1846 €
25 + 45,9010 €55,5402 €


Basic information:

Marking manufacturerAPT80GP60J 
Type of component:IGBT-PT 
KategorieIGBT Full Silicon 
Configuration:single (1T) 
Construction:1*IGBT 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSDa 
REACHNu 
Type of casing:MODUL 
Case:SOT-227 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:buc 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 600 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)151 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)151 [A]
IF(AV) (Tc/Ta=100÷119°C)68 [A]
UCE (sat) (@25°C)2.2 [V]
Pmax with heatsink (TC=25°C)462 [W]
tr (Turn-on / rise time)40 [ns]
tf/tq (Turn-off / fall time)78 [ns]
Qg (Total Gate Charge)280 [nC]
Cin (Input Capacitance)9840 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.27 [°C/W]
RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
Number of Pins
D - Outer diameter 4.1 [mm]
W - Width 25.3 [mm]
L - Length 38.1 [mm]
H - Height 12 [mm]
Rozměry/Velikost (LxWxH)SOT-227 [mm]

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