IGBT Module 3300V/500A , Dual , AlSiC , Gen4 DMOS, Low Switching Loss Range
Informaţii de bază:
Producator de marcare | DIM500GDM33-PS500 |
Type of casing: | MODUL |
Caz: | MODUL - G |
Kategorie | IGBT Full Silicon |
Configurare: | !_single 2*(t+d)_! |
Tipul de material: | !_si-silicon_! |
Material Base | ALSiC |
RoHS | Da |
REACH | Nu |
NOVINKA | A |
RoHS1 | Ano |
Ambalaje şi greutate:
Unitate: | buc |
Greutate: | 1000 [g] |
Tipul de ambalaj: | BOX |
Pachet mic (număr de unități): | 2 |
Parametri electrofizici:
Udc (URRM, UCEO, Umax) | 3300 [V] |
Idc max (Tc/Ta=25÷160°C) | 500 [A] |
IF(AV) (Tc/Ta=100÷119°C) | 500 [A] |
Uisol (@25°C/1min/50Hz) | 6000 [V] |
UF (maximum forward voltage) | 2.6 [VDC] |
UCE (sat) (@25°C) | 2.4 [V] |
I2t (TC/TA=25°C) | 80 [1000*A2s] |
Pd -s chladičem (Tc=25°C) | 5200 [W] |
Esw (125°C) | 2400 [mJ] |
Input Logic Level (Ugs level) | 20V |
tr (Turn-on / rise time) | 260 [ns] |
tf (turn-off=fall time) | 520 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.001 [MHz] |
Qg (Total Gate Charge) | 9000 [nC] |
Cin/CL Load Capacitance | 90000 pF |
Termice și mecanice parametrii:
Tmin (temperatura minimă de lucru) | -40 [°C] |
Tmax (temperatura maximă de lucru) | 150 [°C] |
Rthjc1 IGBT | 0.024 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.048 [°C/W] |
PIN dimensiuni | 0.00 [mm] |