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SiC MOSFET 1200V / 71A SixPack

ID Code:186279
Producator:Microchip Technology
Pret cu TVA : 565,2299 €
Pret fara TVA : 467,1321 €
VAT:21 %
Disponibilitatea:la cerere
Stocul total:0 buc
Marking manufacturer: MSCSM120TAM31CT3AG
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Unit:: buc
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CantitateaPret fara TVAPret cu TVA
1 + 467,1321 €565,2299 €
5 + 447,6688 €541,6792 €
10 + 428,2046 €518,1276 €
25 + 408,7408 €494,5764 €
SiC MOSFET 1200V / 71A SixPack
The MSCSM120TAM31CT3AG device is designed for the following applications: • Uninterruptible Power Supplies • Switched Mode Power Supplies • EV motor and traction drive • Welding converters
• SiC Power MOSFET , High speed switching, Low RDS(on), Ultra low loss
• SiC Schottky Diode, Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance

Basic information:

Marking manufacturerMSCSM120TAM31CT3AG 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Bridge 3f 
Specification:!_sic n-channel mosfet_! 
Type of material:!_sic full_! 
Type of casing:MODUL 

Packaging and weight:

Weight:125 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)89 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)89 [A]
Idc max (Tc/Ta=80÷89°C)71 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)395 [W]
Input Logic Level (UGS level)20V 
RDS (on) 10V (UGS=10÷15V)31 [mΩ]
tr (Turn-on / rise time)30 [ns]
tf/tq (Turn-off / fall time)25 [ns]
Qg (Total Gate Charge)232 [nC]
Cin (Input Capacitance)3020 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.075 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.38 [°C/W]
Rthjc2 Dioda, Tyristor0.9 [°C/W]
RM - Pitch pins3.81 [mm]
RM1 - Spacing of rows 38 [mm]
W - Width 42.5 [mm]
L - Length 73.4 [mm]
H - Height 12 [mm]
Rozměry/Velikost (LxWxH)73x43x12 [mm]
Dimensions of outlets1,35 [mm]
Lv - Length of outlets5.3 [mm]

Alternatives and replacements

Alternative 1:183781 - CCS050M12CM2 (CRE) 
Alternative products 1:CCB032M12FM3 

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